ELECTRONIC-STRUCTURE AND METAL-INSULATOR TRANSITIONS IN TI AND V OXIDES

S. HASE, A FUJIMORI, H NAMATAME, Y FUJISHIMA, Y TOKURA, M ABBATE, JC FUGGLE, H EISAKI, S UCHIDA, Frank de Groot

Research output: Contribution to journalArticleAcademicpeer-review

Abstract

The electronic structures of various Ti and V oxides have been studied by photoemission and X-ray absorption spectroscopy. For LaxSr1-xTiO3, electron doping induces new photoemission feature within the band gap of SrTiO3. For the 3d1 systems, as the Hubbard gap collapses and U/W becomes small, a new spectral feature grows around the Fermi level.

Original languageEnglish
Pages (from-to)1074-1076
Number of pages3
JournalPhysica. B, condensed matter
Volume186-88
Publication statusPublished - May 1993
Externally publishedYes

Keywords

  • RESONANT-PHOTOEMISSION
  • STATES
  • SPECTRA
  • VO2

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