Electronic Quantum Materials Simulated with Artificial Model Lattices

Saoirsé E. Freeney, Marlou R. Slot, Thomas S. Gardenier, Ingmar Swart, Daniel Vanmaekelbergh*

*Corresponding author for this work

Research output: Contribution to journalReview articlepeer-review

Abstract

The band structure and electronic properties of a material are defined by the sort of elements, the atomic registry in the crystal, the dimensions, the presence of spin-orbit coupling, and the electronic interactions. In natural crystals, the interplay of these factors is difficult to unravel, since it is usually not possible to vary one of these factors in an independent way, keeping the others constant. In other words, a complete understanding of complex electronic materials remains challenging to date. The geometry of two- and one-dimensional crystals can be mimicked in artificial lattices. Moreover, geometries that do not exist in nature can be created for the sake of further insight. Such engineered artificial lattices can be better controlled and fine-tuned than natural crystals. This makes it easier to vary the lattice geometry, dimensions, spin-orbit coupling, and interactions independently from each other. Thus, engineering and characterization of artificial lattices can provide unique insights. In this Review, we focus on artificial lattices that are built atom-by-atom on atomically flat metals, using atomic manipulation in a scanning tunneling microscope. Cryogenic scanning tunneling microscopy allows for consecutive creation, microscopic characterization, and band-structure analysis by tunneling spectroscopy, amounting in the analogue quantum simulation of a given lattice type. We first review the physical elements of this method. We then discuss the creation and characterization of artificial atoms and molecules. For the lattices, we review works on honeycomb and Lieb lattices and lattices that result in crystalline topological insulators, such as the Kekulé and "breathing"kagome lattice. Geometric but nonperiodic structures such as electronic quasi-crystals and fractals are discussed as well. Finally, we consider the option to transfer the knowledge gained back to real materials, engineered by geometric patterning of semiconductor quantum wells.

Original languageEnglish
Pages (from-to)198-224
Number of pages27
JournalACS Nanoscience Au
Volume2
Issue number3
DOIs
Publication statusPublished - 15 Feb 2022

Bibliographical note

Publisher Copyright:
© 2022 The Authors. Published by American Chemical Society.

Keywords

  • artificial lattices
  • Dirac bands
  • quantum simulation
  • scanning tunneling microscopy
  • topology

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