Electrochemistry of anodic etching of 4H and 6H–SiC in fluoride solution of pH 3

D.H. van Dorp, J.J.H.B. Sattler, J.H. den Otter, J.J. Kelly

Research output: Contribution to journalArticleAcademicpeer-review

Abstract

Electrochemical etching of single-crystal SiC rotating disk electrodes in fluoride solution was studied at pH 3. Anodic dissolution and passivation are observed for p-type electrodes in the dark and for n-type electrodes under illumination. The dissolution of p-type (0 0 0 1) 4H–SiC is found to be under mixed transport/kinetic control; the diffusion current is first order in fluoride concentration. Polishing of p-type electrodes can be achieved at rates up to 5.8 μm/min. Porous etching was not observed in this case. The surface finish of n-type (0 0 0 1) 4H and 6H–SiC depends on the experimental conditions; both uniform and porous etching are observed. The results are compared with those of Si under comparable conditions.
Original languageUndefined/Unknown
Pages (from-to)6269-6275
Number of pages7
JournalElectrochimica Acta
Volume54
Issue number26
Publication statusPublished - 2009

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