Electrical/piezoresistive effects in bent Alpide MAPS

M. J. Rossewij; E. M. Okkinga; H. M. Naqvi; R. G.E. Barthel; S. R. Alving

doi:10.1088/1748-0221/19/04/C04057

Electrical/piezoresistive effects in bent Alpide MAPS

M. J. Rossewij^*, E. M. Okkinga, H. M. Naqvi, R. G.E. Barthel^*, S. R. Alving^*

^*Corresponding author for this work

Utrecht University

Research output: Contribution to journal › Article › Academic › peer-review

Abstract

The ITS3 upgrade baseline design employs MAPS (Monolithic Active Pixel Sensor) in bent state. Bending experiments with the existing ITS2 MAPS (=Alpide chip) show it remains functional but with relative large analog supply current changes. It is shown that by the piezoresistive effect, rotation of current mirror FETs can be responsible which was confirmed after validating the layout. Measured Gauge Factor has proper sign but is 3 times lower than typical values derived from literature. The magnitude of the measured strain induced PMOS V_th shift is as expected but the sign differs for compressive strain with some of the literature.

Original language	English
Article number	C04057
Journal	Journal of Instrumentation
Volume	19
Issue number	4
DOIs	https://doi.org/10.1088/1748-0221/19/04/C04057
Publication status	Published - 24 Apr 2024

Keywords

Charge transport and multiplication in solid media
Detector design and construction technologies and materials
Materials for solid-state detectors
Particle tracking detectors (Solid-state detectors)

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10.1088/1748-0221/19/04/C04057

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abstract = "The ITS3 upgrade baseline design employs MAPS (Monolithic Active Pixel Sensor) in bent state. Bending experiments with the existing ITS2 MAPS (=Alpide chip) show it remains functional but with relative large analog supply current changes. It is shown that by the piezoresistive effect, rotation of current mirror FETs can be responsible which was confirmed after validating the layout. Measured Gauge Factor has proper sign but is 3 times lower than typical values derived from literature. The magnitude of the measured strain induced PMOS V th shift is as expected but the sign differs for compressive strain with some of the literature.",

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AU - Alving, S. R.

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Electrical/piezoresistive effects in bent Alpide MAPS

Abstract

Keywords

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