Effects of nonadiabaticity on the voltage generated by a moving domain wall

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Abstract

We determine the voltage generated by a field-driven transverse domain wall, taking into account nonadiabatic corrections to the motive force induced by the time-dependent spin Berry phase. Both the diffusive and ballistic transport regimes are considered. We find that the nonadiabatic corrections, together with the contributions due to spin relaxation, determine the voltage for driving fields smaller than the Walker breakdown limit.
Original languageUndefined/Unknown
Pages (from-to)014407/1-014407/8
Number of pages8
JournalPhysical review. B, Condensed matter and materials physics
Volume79
Issue number1
Publication statusPublished - 2009

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