Crystalline silicon surface passivation by hydrogenated amorphous silicon layers deposited by HWCVD, RF PECVD and VHF PECVD: the influence of thermal annealing on minority carrier lifetime

J.A. Schuttauf; C.H.M. van der Werf; C.O. Bommel; M.J. Huijzer; W.G.J.H.M. van Sark; J.K. Rath; R.E.I. Schropp

doi:10.4229/25thEUPVSEC2010-2AO.1.2

Crystalline silicon surface passivation by hydrogenated amorphous silicon layers deposited by HWCVD, RF PECVD and VHF PECVD: the influence of thermal annealing on minority carrier lifetime

J.A. Schuttauf
, C.H.M. van der Werf
, C.O. Bommel
, M.J. Huijzer
, W.G.J.H.M. van Sark
, J.K. Rath
, R.E.I. Schropp

extern

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

Original language	English
Title of host publication	Proceedings of the 25th European Photovoltaic Solar Energy Conference, Valencia, 6-10 September 2010
Editors	G.F. de Santi, H. Ossenbrink, P. Helm
Place of Publication	Munich
Publisher	WIP-Renewable Energies
Pages	1114-1117
Number of pages	4
DOIs	https://doi.org/10.4229/25thEUPVSEC2010-2AO.1.2
Publication status	Published - 6 Sept 2010

Bibliographical note

25th European Photovoltaic Solar Energy Conference

Access to Document

10.4229/25thEUPVSEC2010-2AO.1.2

2AO.1.2_paperFinal published version, 390 KB

Cite this

Schuttauf, J. A., van der Werf, C. H. M., Bommel, C. O., Huijzer, M. J., van Sark, W. G. J. H. M., Rath, J. K., & Schropp, R. E. I. (2010). Crystalline silicon surface passivation by hydrogenated amorphous silicon layers deposited by HWCVD, RF PECVD and VHF PECVD: the influence of thermal annealing on minority carrier lifetime. In G. F. de Santi, H. Ossenbrink, & P. Helm (Eds.), Proceedings of the 25th European Photovoltaic Solar Energy Conference, Valencia, 6-10 September 2010 (pp. 1114-1117). WIP-Renewable Energies. https://doi.org/10.4229/25thEUPVSEC2010-2AO.1.2

Schuttauf, J.A. ; van der Werf, C.H.M. ; Bommel, C.O. et al. / Crystalline silicon surface passivation by hydrogenated amorphous silicon layers deposited by HWCVD, RF PECVD and VHF PECVD: the influence of thermal annealing on minority carrier lifetime. Proceedings of the 25th European Photovoltaic Solar Energy Conference, Valencia, 6-10 September 2010. editor / G.F. de Santi ; H. Ossenbrink ; P. Helm. Munich : WIP-Renewable Energies, 2010. pp. 1114-1117

@inproceedings{efc29a3f971145e1a5032f3d26f7757d,

title = "Crystalline silicon surface passivation by hydrogenated amorphous silicon layers deposited by HWCVD, RF PECVD and VHF PECVD: the influence of thermal annealing on minority carrier lifetime",

author = "J.A. Schuttauf and \{van der Werf\}, C.H.M. and C.O. Bommel and M.J. Huijzer and \{van Sark\}, W.G.J.H.M. and J.K. Rath and R.E.I. Schropp",

note = "25th European Photovoltaic Solar Energy Conference",

year = "2010",

month = sep,

day = "6",

doi = "10.4229/25thEUPVSEC2010-2AO.1.2",

language = "English",

pages = "1114--1117",

editor = "\{de Santi\}, G.F. and H. Ossenbrink and P. Helm",

booktitle = "Proceedings of the 25th European Photovoltaic Solar Energy Conference, Valencia, 6-10 September 2010",

publisher = "WIP-Renewable Energies",

}

Schuttauf, JA, van der Werf, CHM, Bommel, CO, Huijzer, MJ, van Sark, WGJHM, Rath, JK & Schropp, REI 2010, Crystalline silicon surface passivation by hydrogenated amorphous silicon layers deposited by HWCVD, RF PECVD and VHF PECVD: the influence of thermal annealing on minority carrier lifetime. in GF de Santi, H Ossenbrink & P Helm (eds), Proceedings of the 25th European Photovoltaic Solar Energy Conference, Valencia, 6-10 September 2010. WIP-Renewable Energies, Munich, pp. 1114-1117. https://doi.org/10.4229/25thEUPVSEC2010-2AO.1.2

Crystalline silicon surface passivation by hydrogenated amorphous silicon layers deposited by HWCVD, RF PECVD and VHF PECVD: the influence of thermal annealing on minority carrier lifetime. / Schuttauf, J.A.; van der Werf, C.H.M.; Bommel, C.O. et al.
Proceedings of the 25th European Photovoltaic Solar Energy Conference, Valencia, 6-10 September 2010. ed. / G.F. de Santi; H. Ossenbrink; P. Helm. Munich: WIP-Renewable Energies, 2010. p. 1114-1117.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

TY - GEN

T1 - Crystalline silicon surface passivation by hydrogenated amorphous silicon layers deposited by HWCVD, RF PECVD and VHF PECVD: the influence of thermal annealing on minority carrier lifetime

AU - Schuttauf, J.A.

AU - van der Werf, C.H.M.

AU - Bommel, C.O.

AU - Huijzer, M.J.

AU - van Sark, W.G.J.H.M.

AU - Rath, J.K.

AU - Schropp, R.E.I.

N1 - 25th European Photovoltaic Solar Energy Conference

PY - 2010/9/6

Y1 - 2010/9/6

U2 - 10.4229/25thEUPVSEC2010-2AO.1.2

DO - 10.4229/25thEUPVSEC2010-2AO.1.2

M3 - Conference contribution

SP - 1114

EP - 1117

BT - Proceedings of the 25th European Photovoltaic Solar Energy Conference, Valencia, 6-10 September 2010

A2 - de Santi, G.F.

A2 - Ossenbrink, H.

A2 - Helm, P.

PB - WIP-Renewable Energies

CY - Munich

ER -

Schuttauf JA, van der Werf CHM, Bommel CO, Huijzer MJ, van Sark WGJHM, Rath JK et al. Crystalline silicon surface passivation by hydrogenated amorphous silicon layers deposited by HWCVD, RF PECVD and VHF PECVD: the influence of thermal annealing on minority carrier lifetime. In de Santi GF, Ossenbrink H, Helm P, editors, Proceedings of the 25th European Photovoltaic Solar Energy Conference, Valencia, 6-10 September 2010. Munich: WIP-Renewable Energies. 2010. p. 1114-1117 doi: 10.4229/25thEUPVSEC2010-2AO.1.2