Bonding rearrangement in amorphous silicon nitrides deposited by hot-wire chemical vapor deposition upon thermal annealing

Y. Mai; V. Verlaan; C.H.M. van der Werf; Z.S. Houweling; R. Bakker; J.K. Rath; R.E.I. Schropp

Bonding rearrangement in amorphous silicon nitrides deposited by hot-wire chemical vapor deposition upon thermal annealing

Y. Mai, V. Verlaan, C.H.M. van der Werf, Z.S. Houweling, R. Bakker, J.K. Rath, R.E.I. Schropp

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Abstract

The bonding rearrangement upon thermal annealing of amorphous silicon nitride (a-SiNx:H) films deposited by hot-wire chemical vapor deposition was studied. A wide range of N/Si atom ratio between 0.5 and 1.6 was obtained for the a-SiNx:H sample series by varying the source gases ratio only. Evolutions of Si–N, Si–H and N–H bonds upon annealing were found to depend strongly on the N/Si atom ratio of the films. According to the above observations, we propose possible reaction pathways for bonding rearrangement in a-SiNx:H with different N/Si ratios.

Original language	Undefined/Unknown
Pages (from-to)	2372-2375
Number of pages	4
Journal	Journal of Non-Crystalline Solids
Volume	354
Issue number	19-25
Publication status	Published - 2008

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@article{1c6dc9266b694006b79c49fca75e9cb6,

title = "Bonding rearrangement in amorphous silicon nitrides deposited by hot-wire chemical vapor deposition upon thermal annealing",

abstract = "The bonding rearrangement upon thermal annealing of amorphous silicon nitride (a-SiNx:H) films deposited by hot-wire chemical vapor deposition was studied. A wide range of N/Si atom ratio between 0.5 and 1.6 was obtained for the a-SiNx:H sample series by varying the source gases ratio only. Evolutions of Si–N, Si–H and N–H bonds upon annealing were found to depend strongly on the N/Si atom ratio of the films. According to the above observations, we propose possible reaction pathways for bonding rearrangement in a-SiNx:H with different N/Si ratios.",

author = "Y. Mai and V. Verlaan and \{van der Werf\}, C.H.M. and Z.S. Houweling and R. Bakker and J.K. Rath and R.E.I. Schropp",

year = "2008",

language = "Undefined/Unknown",

volume = "354",

pages = "2372--2375",

journal = "Journal of Non-Crystalline Solids",

issn = "0022-3093",

publisher = "Elsevier BV",

number = "19-25",

}

TY - JOUR

T1 - Bonding rearrangement in amorphous silicon nitrides deposited by hot-wire chemical vapor deposition upon thermal annealing

AU - Mai, Y.

AU - Verlaan, V.

AU - van der Werf, C.H.M.

AU - Houweling, Z.S.

AU - Bakker, R.

AU - Rath, J.K.

AU - Schropp, R.E.I.

PY - 2008

Y1 - 2008

N2 - The bonding rearrangement upon thermal annealing of amorphous silicon nitride (a-SiNx:H) films deposited by hot-wire chemical vapor deposition was studied. A wide range of N/Si atom ratio between 0.5 and 1.6 was obtained for the a-SiNx:H sample series by varying the source gases ratio only. Evolutions of Si–N, Si–H and N–H bonds upon annealing were found to depend strongly on the N/Si atom ratio of the films. According to the above observations, we propose possible reaction pathways for bonding rearrangement in a-SiNx:H with different N/Si ratios.

AB - The bonding rearrangement upon thermal annealing of amorphous silicon nitride (a-SiNx:H) films deposited by hot-wire chemical vapor deposition was studied. A wide range of N/Si atom ratio between 0.5 and 1.6 was obtained for the a-SiNx:H sample series by varying the source gases ratio only. Evolutions of Si–N, Si–H and N–H bonds upon annealing were found to depend strongly on the N/Si atom ratio of the films. According to the above observations, we propose possible reaction pathways for bonding rearrangement in a-SiNx:H with different N/Si ratios.

M3 - Article

SN - 0022-3093

VL - 354

SP - 2372

EP - 2375

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - 19-25

ER -