Abstract
It has been recently established that optoelectronic and nonlinear transport experiments can give direct access to the dipole moment of the Berry curvature in nonmagnetic and noncentrosymmetric materials. Thus far, nonvanishing Berry curvature dipoles have been shown to exist in materials with substantial spin-orbit coupling where low-energy Dirac quasiparticles form tilted cones. Here, we prove that this topological effect does emerge in two-dimensional Dirac materials even in the complete absence of spin-orbit coupling. In these systems, it is the warping of the Fermi surface that triggers sizable Berry dipoles. We show indeed that uniaxially strained monolayer and bilayer graphene, with substrate-induced and gate-induced band gaps, respectively, are characterized by Berry curvature dipoles comparable in strength to those observed in monolayer and bilayer transition metal dichalcogenides.
| Original language | English |
|---|---|
| Article number | 196403 |
| Number of pages | 5 |
| Journal | Physical Review Letters |
| Volume | 123 |
| Issue number | 19 |
| DOIs | |
| Publication status | Published - 8 Nov 2019 |
Funding
To wrap up, we have shown that nonvanishing Berry curvature dipoles can emerge even in the complete absence of spin-orbit coupling in two-dimensional Dirac materials as a result of the warping of the Fermi surface. We have in fact proved that, in the presence of substrate-induced and gate-induced band gaps, respectively, uniaxially strained monolayer and Bernal-stacked bilayer graphene do possess sizable Berry curvature dipoles. In the bilayer structure, the Berry dipole is strongly enhanced and its value is comparable to the one experimentally observed in bilayer WTe 2 . Since the warping of the Fermi surface is ubiquitous, we expect that our results apply to a large number of two-dimensional materials where strain engineering can be used to achieve the minimum symmetry constraints for a nonvanishing Berry curvature dipole. 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