Berry Curvature Dipole in Strained Graphene: A Fermi Surface Warping Effect

Raffaele Battilomo, Niccoló Scopigno, Carmine Ortix

Research output: Contribution to journalArticleAcademicpeer-review

Abstract

It has been recently established that optoelectronic and nonlinear transport experiments can give direct access to the dipole moment of the Berry curvature in nonmagnetic and noncentrosymmetric materials. Thus far, nonvanishing Berry curvature dipoles have been shown to exist in materials with substantial spin-orbit coupling where low-energy Dirac quasiparticles form tilted cones. Here, we prove that this topological effect does emerge in two-dimensional Dirac materials even in the complete absence of spin-orbit coupling. In these systems, it is the warping of the Fermi surface that triggers sizable Berry dipoles. We show indeed that uniaxially strained monolayer and bilayer graphene, with substrate-induced and gate-induced band gaps, respectively, are characterized by Berry curvature dipoles comparable in strength to those observed in monolayer and bilayer transition metal dichalcogenides.

Original languageEnglish
Article number196403
Number of pages5
JournalPhysical Review Letters
Volume123
Issue number19
DOIs
Publication statusPublished - 8 Nov 2019

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