Abstract
Semiconducting graphene nanoribbons (GNRs) are envisioned to play an important role in future electronics. This requires the GNRs to be placed on a surface where they may become strained. Theory predicts that axial strain, i.e. in-plane bending of the GNR, will cause a change in the band gap of the GNR. This may negatively affect device performance. Using the tip of a scanning tunneling microscope we controllably bent and buckled atomically well-defined narrow armchair GNR and subsequently probed the changes in the local density of states. These experiments show that the band gap of 7-ac-GNR is very robust to in-plane bending and out-of-plane buckling.
Original language | English |
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Journal | New Journal of Physics |
Volume | 17 |
Issue number | 053013 |
DOIs | |
Publication status | Published - 12 May 2015 |