Bandgap reference, temperature sensor and low drop-out regulator circuits monolithic sensors in TPSCo 65 nm ISC technology

A. Yelkenci; S. Qui; M. J. Rossewij; A. Grelli; D. Gajanana; V. Gromov

doi:10.1088/1748-0221/18/02/C02017

Bandgap reference, temperature sensor and low drop-out regulator circuits monolithic sensors in TPSCo 65 nm ISC technology

A. Yelkenci^*, S. Qui, M. J. Rossewij, A. Grelli, D. Gajanana, V. Gromov

^*Corresponding author for this work

National Institute for Subatomic Physics

Research output: Contribution to journal › Article › Academic › peer-review

Abstract

With Inner Tracking System v3 (ITS3), the ALICE experiment is pursuing a wafer-scale Monolithic Active Pixel Sensor (MAPS). The chip is being developed in TPSCo 65 nm ISC technology which is under study in the framework of CERN EP R&D on monolithic sensors for High Energy Physics (HEP) applications. This contribution presents designs and measurement results of building blocks needed for this chip, in particular bandgap references and temperature sensors. In addition, simulation results of the design of Low Drop-out Regulator (LDO) to be submitted for the next prototyping run will be discussed.

Original language	English
Article number	C02017
Number of pages	8
Journal	Journal of Instrumentation
Volume	18
Issue number	2
DOIs	https://doi.org/10.1088/1748-0221/18/02/C02017
Publication status	Published - 1 Feb 2023

Keywords

Radiation-hard electronics
VLSI circuits

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10.1088/1748-0221/18/02/C02017

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title = "Bandgap reference, temperature sensor and low drop-out regulator circuits monolithic sensors in TPSCo 65 nm ISC technology",

abstract = "With Inner Tracking System v3 (ITS3), the ALICE experiment is pursuing a wafer-scale Monolithic Active Pixel Sensor (MAPS). The chip is being developed in TPSCo 65 nm ISC technology which is under study in the framework of CERN EP R&D on monolithic sensors for High Energy Physics (HEP) applications. This contribution presents designs and measurement results of building blocks needed for this chip, in particular bandgap references and temperature sensors. In addition, simulation results of the design of Low Drop-out Regulator (LDO) to be submitted for the next prototyping run will be discussed.",

keywords = "Radiation-hard electronics, VLSI circuits",

author = "A. Yelkenci and S. Qui and Rossewij, {M. J.} and A. Grelli and D. Gajanana and V. Gromov",

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AU - Yelkenci, A.

AU - Qui, S.

AU - Rossewij, M. J.

AU - Grelli, A.

AU - Gajanana, D.

AU - Gromov, V.

PY - 2023/2/1

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AB - With Inner Tracking System v3 (ITS3), the ALICE experiment is pursuing a wafer-scale Monolithic Active Pixel Sensor (MAPS). The chip is being developed in TPSCo 65 nm ISC technology which is under study in the framework of CERN EP R&D on monolithic sensors for High Energy Physics (HEP) applications. This contribution presents designs and measurement results of building blocks needed for this chip, in particular bandgap references and temperature sensors. In addition, simulation results of the design of Low Drop-out Regulator (LDO) to be submitted for the next prototyping run will be discussed.

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KW - VLSI circuits

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VL - 18

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JF - Journal of Instrumentation

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ER -

Bandgap reference, temperature sensor and low drop-out regulator circuits monolithic sensors in TPSCo 65 nm ISC technology

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Keywords

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