ATOMISTIC CALCULATIONS ON LOW-TEMPERATURE LAYER-BY-LAYER GROWTH

M BREEMAN*, DO BOERMA, G.T. Barkema

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

Abstract

We have studied deposition-induced mobility of atoms on surfaces by means of molecular dynamics (MD) simulations. In these simulations, Cu and In atoms were deposited with thermal energies on flat and adatom-cluster covered Cu(100) surfaces at a temperature of 100 K. It was found that in some cases the latent heat of condensation is used by the deposited atom to make a jump to a neighbouring site. Atoms deposited on small adatom clusters were in some cases observed to jump off the cluster. The results of the MD simulations were used in a discussion of low-temperature layer-by-layer growth of Cu on Cu(100), as was recently observed experimentally.

Original languageEnglish
Pages (from-to)526-530
Number of pages5
JournalSurface Science
Volume307
Publication statusPublished - 20 Apr 1994
Event13th European Conference on Surface Science (ECOSS-13) - WARWICK, United Kingdom
Duration: 30 Aug 19934 Sept 1993

Keywords

  • DIFFRACTION
  • SURFACES
  • CU(100)
  • ATOMS

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