Abstract
The photoelectrochemistry of silicon carbide in alkaline solution was
investigated with a view to wet-chemical etching applications. Anodic
dissolution and passivation of the p-type semiconductor was observed in the
dark; illumination with supra-bandgap light was required for oxidation of
the n-type electrode. At low KOH concentrations and low light intensities,
diffusion-controlled etching is observed for n-type SiC. We show that
open-circuit photoetching can be used for defect revealing. Furthermore,
based on the electrochemical properties of silicon carbide and silicon, we
expect various material-selective etching processes to be possible.
Original language | Undefined/Unknown |
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Pages (from-to) | S50-S55 |
Number of pages | 6 |
Journal | Journal of Micromechanics and Microengineering |
Volume | 17 |
Publication status | Published - 2007 |