Anodic etching of SiC in alkaline solutions

D.H. van Dorp, J.L. Weyher, J.J. Kelly

Research output: Contribution to journalArticleAcademicpeer-review

Abstract

The photoelectrochemistry of silicon carbide in alkaline solution was investigated with a view to wet-chemical etching applications. Anodic dissolution and passivation of the p-type semiconductor was observed in the dark; illumination with supra-bandgap light was required for oxidation of the n-type electrode. At low KOH concentrations and low light intensities, diffusion-controlled etching is observed for n-type SiC. We show that open-circuit photoetching can be used for defect revealing. Furthermore, based on the electrochemical properties of silicon carbide and silicon, we expect various material-selective etching processes to be possible.
Original languageUndefined/Unknown
Pages (from-to)S50-S55
Number of pages6
JournalJournal of Micromechanics and Microengineering
Volume17
Publication statusPublished - 2007

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