All hot wire chemical vapor deposition low substrate temperature transparent thin film moisture barrier

D.A. Spee; M.R. Schipper; C.H.M. van der Werf; J.K. Rath; R.E.I. Schropp

doi:10.1016/j.tsf.2012.11.146

All hot wire chemical vapor deposition low substrate temperature transparent thin film moisture barrier

D.A. Spee, M.R. Schipper, C.H.M. van der Werf, J.K. Rath, R.E.I. Schropp

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Abstract

We deposited a silicon nitride/polymer hybrid multilayer moisture barrier for flexible electronics in a hot wire chemical vapor deposition process, entirely below 100 °C. We were able to reach a water vapor transmission rate (WVTR) as low as 5×10−6 g/m2/day at a temperature of 60 °C and a relative humidity of 90% for a simple three-layer structure consisting of two low-temperature silicon nitride (SiNx) layers and a polymer layer in between. This WVTR is low enough for organic and polymer devices. In a second experiment it is investigated how the yield of our samples increases with the number of SiNx layers, while keeping the total SiNx thickness constant. Cross sectional scanning electron microscopy images of degraded samples reveal a high structural robustness of our multilayers.

Original language	English
Pages (from-to)	84-88
Number of pages	5
Journal	Thin Solid Films
Volume	532
DOIs	https://doi.org/10.1016/j.tsf.2012.11.146
Publication status	Published - 2013

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title = "All hot wire chemical vapor deposition low substrate temperature transparent thin film moisture barrier",

abstract = "We deposited a silicon nitride/polymer hybrid multilayer moisture barrier for flexible electronics in a hot wire chemical vapor deposition process, entirely below 100 °C. We were able to reach a water vapor transmission rate (WVTR) as low as 5×10−6 g/m2/day at a temperature of 60 °C and a relative humidity of 90% for a simple three-layer structure consisting of two low-temperature silicon nitride (SiNx) layers and a polymer layer in between. This WVTR is low enough for organic and polymer devices. In a second experiment it is investigated how the yield of our samples increases with the number of SiNx layers, while keeping the total SiNx thickness constant. Cross sectional scanning electron microscopy images of degraded samples reveal a high structural robustness of our multilayers.",

author = "D.A. Spee and M.R. Schipper and {van der Werf}, C.H.M. and J.K. Rath and R.E.I. Schropp",

year = "2013",

doi = "10.1016/j.tsf.2012.11.146",

language = "English",

volume = "532",

pages = "84--88",

journal = "Thin Solid Films",

issn = "0040-6090",

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T1 - All hot wire chemical vapor deposition low substrate temperature transparent thin film moisture barrier

AU - Spee, D.A.

AU - Schipper, M.R.

AU - van der Werf, C.H.M.

AU - Rath, J.K.

AU - Schropp, R.E.I.

PY - 2013

Y1 - 2013

N2 - We deposited a silicon nitride/polymer hybrid multilayer moisture barrier for flexible electronics in a hot wire chemical vapor deposition process, entirely below 100 °C. We were able to reach a water vapor transmission rate (WVTR) as low as 5×10−6 g/m2/day at a temperature of 60 °C and a relative humidity of 90% for a simple three-layer structure consisting of two low-temperature silicon nitride (SiNx) layers and a polymer layer in between. This WVTR is low enough for organic and polymer devices. In a second experiment it is investigated how the yield of our samples increases with the number of SiNx layers, while keeping the total SiNx thickness constant. Cross sectional scanning electron microscopy images of degraded samples reveal a high structural robustness of our multilayers.

AB - We deposited a silicon nitride/polymer hybrid multilayer moisture barrier for flexible electronics in a hot wire chemical vapor deposition process, entirely below 100 °C. We were able to reach a water vapor transmission rate (WVTR) as low as 5×10−6 g/m2/day at a temperature of 60 °C and a relative humidity of 90% for a simple three-layer structure consisting of two low-temperature silicon nitride (SiNx) layers and a polymer layer in between. This WVTR is low enough for organic and polymer devices. In a second experiment it is investigated how the yield of our samples increases with the number of SiNx layers, while keeping the total SiNx thickness constant. Cross sectional scanning electron microscopy images of degraded samples reveal a high structural robustness of our multilayers.

U2 - 10.1016/j.tsf.2012.11.146

DO - 10.1016/j.tsf.2012.11.146

M3 - Article

SN - 0040-6090

VL - 532

SP - 84

EP - 88

JO - Thin Solid Films

JF - Thin Solid Films

ER -

All hot wire chemical vapor deposition low substrate temperature transparent thin film moisture barrier

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