Above-CMOS a-Si and CIGS solar cells for powering autonomous microsystems

J. Lu; W. Liu; C.H.M. van der Werf; A.Y. Kovalgin; Y. Sun; R.E.I. Schropp; J. Schmitz

doi:10.1109/IEDM.2010.5703457

Above-CMOS a-Si and CIGS solar cells for powering autonomous microsystems

J. Lu
, W. Liu
, C.H.M. van der Werf
, A.Y. Kovalgin
, Y. Sun
, R.E.I. Schropp
, J. Schmitz

extern

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

Two types of solar cells are successfully grown on chips from two CMOS generations. The efficiency of amorphous-silicon (a-Si) solar cells reaches 5.2%, copperindium- gallium-selenide (CIGS) cells 7.1%. CMOS functionality is unaffected. The main integration issues: adhesion, surface topography, metal ion contamination, process temperature, and mechanical stress can be resolved while maintaining standard photovoltaic processing

Original language	English
Title of host publication	Electron Devices Meeting (IEDM), 2010 IEEE International
Publisher	IEEE
Pages	31.3.1-31.3.4
Number of pages	4
DOIs	https://doi.org/10.1109/IEDM.2010.5703457
Publication status	Published - 6 Dec 2010

Bibliographical note

International Electron Device Meeting

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

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Above CMOS Lu 2010
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@inproceedings{2986137accfc4023a310236b87001070,

title = "Above-CMOS a-Si and CIGS solar cells for powering autonomous microsystems",

abstract = "Two types of solar cells are successfully grown on chips from two CMOS generations. The efficiency of amorphous-silicon (a-Si) solar cells reaches 5.2\%, copperindium- gallium-selenide (CIGS) cells 7.1\%. CMOS functionality is unaffected. The main integration issues: adhesion, surface topography, metal ion contamination, process temperature, and mechanical stress can be resolved while maintaining standard photovoltaic processing",

author = "J. Lu and W. Liu and \{van der Werf\}, C.H.M. and A.Y. Kovalgin and Y. Sun and R.E.I. Schropp and J. Schmitz",

note = "International Electron Device Meeting",

year = "2010",

month = dec,

day = "6",

doi = "10.1109/IEDM.2010.5703457",

language = "English",

pages = "31.3.1--31.3.4",

booktitle = "Electron Devices Meeting (IEDM), 2010 IEEE International",

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address = "United States",

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TY - GEN

T1 - Above-CMOS a-Si and CIGS solar cells for powering autonomous microsystems

AU - Lu, J.

AU - Liu, W.

AU - van der Werf, C.H.M.

AU - Kovalgin, A.Y.

AU - Sun, Y.

AU - Schropp, R.E.I.

AU - Schmitz, J.

N1 - International Electron Device Meeting

PY - 2010/12/6

Y1 - 2010/12/6

N2 - Two types of solar cells are successfully grown on chips from two CMOS generations. The efficiency of amorphous-silicon (a-Si) solar cells reaches 5.2%, copperindium- gallium-selenide (CIGS) cells 7.1%. CMOS functionality is unaffected. The main integration issues: adhesion, surface topography, metal ion contamination, process temperature, and mechanical stress can be resolved while maintaining standard photovoltaic processing

AB - Two types of solar cells are successfully grown on chips from two CMOS generations. The efficiency of amorphous-silicon (a-Si) solar cells reaches 5.2%, copperindium- gallium-selenide (CIGS) cells 7.1%. CMOS functionality is unaffected. The main integration issues: adhesion, surface topography, metal ion contamination, process temperature, and mechanical stress can be resolved while maintaining standard photovoltaic processing

U2 - 10.1109/IEDM.2010.5703457

DO - 10.1109/IEDM.2010.5703457

M3 - Conference contribution

SP - 31.3.1-31.3.4

BT - Electron Devices Meeting (IEDM), 2010 IEEE International

PB - IEEE

ER -

Above-CMOS a-Si and CIGS solar cells for powering autonomous microsystems

Abstract

Bibliographical note

UN SDGs

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Cite this