Abstract
A new method is presented that is capable of resolving the parameters in
a double-exponential model with which the electrical characteristics of
a crystalline-silicon solar cell are analyzed. This method gives not
only open-circuit voltage, short-circuit current, fill factor and
efficiency, but also diode saturations, light-generated current, series
resistance and shunt resistance, all from one measurement under AM1
illumination. The experimental set-up used for I-V measurement and
automated data handling is described. A fast computer fit procedure is
introduced which resolves all parameters from one measurement. The
errors in the parameter values obtained are studied. A comparison of
these values for a number of I-V measurements of solar cells with
different internal physical properties is given, in order to illustrate
the utility of the method for unravelling various electrical processes
in a solar cell.
Original language | English |
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Pages (from-to) | 241-251 |
Journal | Solar Cells |
Volume | 17 |
Issue number | 2-3 |
DOIs | |
Publication status | Published - Apr 1986 |
Keywords
- Energy Conversion Efficiency
- Open Circuit Voltage
- Short Circuit Currents
- Solar Cells
- Volt-Ampere Characteristics
- Analog To Digital Converters
- Annealing
- Ion Implantation
- Laser Applications
- Solar Simulation