µc-Si: H n-type doped layers resistant against HWCVD i-layers deposited at high temperature and high growth rate

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@article{cf339f1a33994f12b00eae7827b74577,

title = "µc-Si: H n-type doped layers resistant against HWCVD i-layers deposited at high temperature and high growth rate",

author = "A. Gordijn and J. Francke and J.K. Rath and R.E.I. Schropp",

year = "2006",

language = "Undefined/Unknown",

volume = "501",

pages = "338--340",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier BV",

number = "(1-2)",

}