µc-Si: H n-type doped layers resistant against HWCVD i-layers deposited at high temperature and high growth rate

A. Gordijn, A.L. Francke, J.K. Rath, R.E.I. Schropp

Research output: Contribution to journal › Article › Academic › peer-review

available online 19 august 2005

Cite this

@article{a3de492655b14816a4d18d47e8eafcb7,

title = "µc-Si: H n-type doped layers resistant against HWCVD i-layers deposited at high temperature and high growth rate",

author = "A. Gordijn and A.L. Francke and J.K. Rath and R.E.I. Schropp",

note = "available online 19 august 2005",

year = "2005",

language = "Undefined/Unknown",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier BV",

}